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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2055AF DESCRIPTION With TO-3P(H)IS package High voltage ;high speed Built-in damper diode APPLICATIONS Horizontal deflection for color TV PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg Collector-base voltage PARAMETER CHA IN Collector current Collector-emitter voltage Emitter-base voltage ES NG Open emitter Open base MIC E CONDITIONS OND TOR UC VALUE 1500 700 5 8 15 UNIT V V V A A W ae ae Open collector Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae 50 150 -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 2.5 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=100mA ;IB=0 IC=4.5A ;IB=2.0A IC=4.5A ;IB=2.0A VCE=1500V; VBE=0 TC=125ae VEB=5V; IC=0 IC=1A ; VCE=5V IC=0.1A ; VCE=5V;f=5MHz 8 7 MIN 700 TYP. S2055AF SYMBOL VCEO(SUS) VCEsat VBEsat ICES IEBO hFE fT MAX UNIT V 1.0 1.3 1 2 300 V V mA mA MHz Switching times inductive load ts tf Fall time Storage time CHA IN E SEM NG IC=4.5A ; hFE=2.5; VCC=140V LC=0.9mH; LB=3|I H OND IC TOR UC 7 |I |I 0.55 s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE S2055AF CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 |
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